1, 7, 8: Silicon Oxide Layer; 2: Cavity (Vacuum); 3: Silicon Membrane; 4: Metal Electrode Layer (Gold);
5, 6: Water
Global Parameters:
r_mem (device radius): 70 um
t_mem (device height): 1.34 um
r_cav (cavity radius): 60 um
t_cav (cavity height): 1.5 um
t_ox (oxide height): 250 nm
t_metal (metal height): 100 nm
Vdc (DC Bias): 80 V
fre (AC Frequency): 100 kHz
Vac (AC excitation): 50 mV
Device Size Specification:
Membrane (3):
width - r_mem
height - t_mem
Oxide Layer (1, 7, 8):
width - r_mem
height - t_ox + t_cav
Cavity (2):
width - r_cav
height - t_cav
Electrode (4):
width - r_mem
height - t_metal
Results
Resonance Frequency: 0.4 MHz
Maximum displacement and impedance occur at 0.4 MHz
AC Potential VS Membrane Displacement
0.6 MHz AC Frequency
0.2 MHz AC Frequency
0.45 MHz AC Frequency
DC Bias VS Membrane Displacement
β Problem when computing DC Bias over 152.5V (inverted mesh error)
Pressure/Intensity vs Membrane Displacement
Highest output pressure when frequency set to resonant frequency (0.4 MHz)
Questions: